Silicon N Channel MOS Type (π−MOSV) FET, Transistor.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 20 A
4. Drain power dissipation : PD = 150 W
5. Single pulse avalanche energy : Eas = 960 mJ
6. Avalanche curren : Iar = 20 A
7. Repetitive avalanche energy : Ear = 15mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C
Inquiry - K2837
